ixa60if1200n a copack nc i = a; v = v xpt igbt symbol definition r a t i n g s features / advantages: typ. max. i c25 a t a rbsoa 150 v 2.1 v c(3) e(1+4) (g) 2 min. 200 applications: v ces v 1200 88 t = 25c c t = 90c c a 56 package: part number t = 125c vj v = v; ge r = g 15 v ge(th) 6.5 v 2.1 v 5.4 i v c25 = = 88 1200 15 IXA60IF1200NA a v collector emitter voltage collector current reverse bias safe operation area gate emitter threshold voltage conditions unit t = 25c vj p tot w 290 t = 25c vj s 10 v = v cek 1200 v = v; v = 15 v ce 900 total power dissipation = 1.8 v housing: sot-227b (minibloc) easy paralleling due to the positive temperature coefficient of the on-state voltage rugged xpt design (xtreme light punch through) results in: - short circuit rated for 10 sec. - very low gate charge - low emi - square rbsoa @ 3x ic thin wafer technology combined with the xpt design results in a competitive low vce(sat) sonic? diode - fast and soft reverse recovery - low operating forward voltage ac motor drives solar inverter medical equipment uninterruptible power supply air-conditioning systems welding equipment switched-mode and resonant-mode power supplies inductive heating, cookers v ges v 20 maximum dc gate voltage t = 25c vj i sc ; non-repetitive short circuit current i ces ma v = v ; v = 0 v 0.1 collector emitter leakage current ce t = 25c vj ma 0.1 i ges na 500 gate emitter leakage current r thjc 0.43 thermal resistance juntion to case t d(on) ns 70 turn-on delay time 40 ns t = c 125 turn-on energy per pulse ns 250 100 ns 4.5 5.5 190 mj mj inductive load vj ce(sat) collector emitter saturation voltage sc short circuit duration ces v ce(sat)typ i c90 r = g scsoa short circuit safe operation area ge i = ma; v = v c ge t = 25c vj t = c vj 125 1.8 c ge ce ces ge 6 t = c vj 125 v = 0 v; v = 20 v ce ge v = v; i = a ce c current rise time turn-off delay time current fall time turn-off energy per pulse t r t d(off) t f e on e off v = 15 v; r = ge g q gon total gate charge k/w v = v; v = v; i = a ce ge c 15 55 15 2 600 50 15 600 15 50 a t = 125c vj igbt v = 0 v ge ixys reserves the right to change limits, conditions and dimensions. 20100623a data according to iec 60747and per diode unless otherwise specified ? 2010 ixys all rights reserved http://www..net/ datasheet pdf - http://www..net/
ixa60if1200n a t = c i f25 a 85 t = 25c c forward current reverse recovery time v = v q t = 25c reverse recovery charge v 1.95 c i = a vj r vj symbol definition ratings typ. max. min. conditions uni t f rr 8 350 n s t rr maximum reverse recovery current 60 a 2.5 r thjc thermal resistance juntion to case 0.6 k/w di /dt = - a/s; f 1200 igbt 1.1 v v 0 diode 1.25 v i f t = c c a 51 v f forward voltage t = c 125 vj v 1.95 i rm e rec(off) reverse recovery losses at turn-off i = a f symbol definition ratings typ. max. min. uni t i v 0 r 0 r 0 v 0 r 0 28 14.2 diode equivalent circuits for simulation r1 r2 r3 r4 c1 c2 c3 c4 0.1 r 1 0.21 diode igbt r 2 r 3 r 4 0.05 0.07 0.137 0.233 0.1 0.13 0.0025 1 0.03 2 3 4 0.03 0.08 0.0025 0.03 0.03 0.08 t = c vj 150 t = c vj 150 60 60 90 90 mj ixys reserves the right to change limits, conditions and dimensions. 20100623a data according to iec 60747and per diode unless otherwise specified ? 2010 ixys all rights reserved http://www..net/ datasheet pdf - http://www..net/
ixa60if1200n a ratings ordering delivering mode base qty code key standard part name ixa 60 if 1200 na 508765 tube 10 abcde yyww xxxxxx product marking logo part no. datecode assembly code i x a 60 if 1200 na part number igbt xpt igbt gen 1 / std copack sot-227b (minibloc) = = = marking on product IXA60IF1200NA current rating [a] reverse voltage [v] = = = = package sot-227b (minibloc) r thch k/w 0.10 m d nm 1.5 mounting torque 1.1 t stg c 150 storage temperature -40 weight g 30 symbol definition typ. max. min. conditions thermal resistance case to heatsink unit m t nm 1.5 terminal torque 1.1 v isol v 3000 t = 1 second v 2500 t = 1 minute isolation voltage d s mm 8 mm 4 creapage distance on surface d a striking distance through air t vj c 150 virtual junction temperature -55 ixys reserves the right to change limits, conditions and dimensions. 20100623a data according to iec 60747and per diode unless otherwise specified ? 2010 ixys all rights reserved http://www..net/ datasheet pdf - http://www..net/
ixa60if1200n a sym millimeters inches min max min max a 31.50 31.88 1.240 1.255 b 7.80 8.20 .307 .323 c 4.09 4.29 .161 .169 d 4.09 4.29 .161 .169 e 4.09 4.29 .161 .169 f 14.91 15.11 .587 .595 g 30.12 30.30 1.186 1.193 h 37.80 38.23 1.489 1.505 j 11.68 12.22 .460 .481 k 8.92 9.60 .351 .378 l 0.76 0.84 .030 .033 m 12.60 12.85 .496 .506 n 25.15 25.42 .990 1.001 o 1.98 2.13 .078 .084 p 4.95 5.97 .195 .235 q 26.54 26.90 1.045 1.059 r 3.94 4.42 .155 .174 s 4.72 4.85 .186 .191 t 24.59 25.07 .968 .987 u -.05 .10 -.002 .004 v 3.30 4.57 .130 .180 w 19.81 21.08 .780 .830 h a g b s d c e f q o r u j k p l t m w n v nut m4 din 934 lens head screw m4x8 din 7985 ixys reserves the right to change limits, conditions and dimensions. 20100623a data according to iec 60747and per diode unless otherwise specified ? 2010 ixys all rights reserved http://www..net/ datasheet pdf - http://www..net/
ixa60if1200n a 0123 0 20 40 60 80 10 0 0 20406080100120 0 2 4 6 8 10 01234 0 20 40 60 80 10 0 v ce [v] i c [a] q g [nc] v ge [v] 9 v 11 v 5 6 7 8 9 10111213 0 20 40 60 80 100 04080120160200240 0 5 10 15 20 t vj =25c t vj = 125c t vj =25c t vj = 125c 13 v 12 16 20 24 28 32 4.0 4.5 5.0 5.5 6.0 e [mj] e off t vj = 125c fig. 1 typ. output characteristics v ge =15 v v ce [v] i c [a] v ge =15 v 17 v 19 v fig. 2 typ. output characteristics i c [a] fig. 3 typ. tranfer characteristics v ge [v] fig. 4 typ. turn-on gate charge fig. 5 typ. switching energy vs. collector current e on fig. 6 typ. switching energy vs. gate resistance r g [ ] e [mj] i c [a] e on e off i c =50a v ce =600v r g =15 v ce = 600 v v ge = 15 v t vj = 125c i c =50a v ce = 600 v v ge = 15 v t vj = 125c ixys reserves the right to change limits, conditions and dimensions. 20100623a data according to iec 60747and per diode unless otherwise specified ? 2010 ixys all rights reserved http://www..net/ datasheet pdf - http://www..net/
ixa60if1200n a 600 700 800 900 1000 1100 1200 1300 2 4 6 8 10 12 14 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 20 40 60 80 100 120 q rr [c] i f [a] v f [v] di f /dt [a/s] t vj = 125c t vj = 25c t vj = 125c v r =600 v 30 a 60 a 120 a fig. 7 typ. forward current versus v f fig. 8 typ. reverse recov.charge q rr vs. di/dt 600 700 800 900 1000 1100 1200 1300 0 10 20 30 40 50 60 70 80 90 i rr [a] di f /dt [a/s] t vj = 125c v r =600 v 120 a 30 a 60 a fig. 9 typ. peak reverse current i rm vs. di/dt 600 700 800 900 1000 1100 1200 1300 0 100 200 300 400 500 600 700 t rr [ns] di f /dt [a/s] 120 a 30 a 60 a t vj =125c v r = 600 v fig. 10 typ. recovery time t rr versus di/dt fig. 11 typ. recovery energy e rec versus di/dt 600 700 800 900 1000 1100 1200 1300 0.0 0.8 1.6 2.4 3.2 4.0 e rec [mj] di f /dt [a/s] t vj = 125c v r = 600 v 120 a 30 a 60 a 0.001 0.01 0.1 1 10 0.01 0.1 1 t p [s] z thjc [k/w] fig. 12 typ. transient thermal impedance igbt diode ixys reserves the right to change limits, conditions and dimensions. 20100623a data according to iec 60747and per diode unless otherwise specified ? 2010 ixys all rights reserved http://www..net/ datasheet pdf - http://www..net/
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